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Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA and mixer - 1GHz
SA601
DESCRIPTION
The SA601 is a combined RF amplifier and mixer designed for high-performance low-power communication systems from 800-1200MHz. The low-noise preamplifier has a 1.6dB noise figure at 900MHz with 11.5dB gain and an IP3 intercept of -2dBm at the input. The gain is stabilized by on-chip compensation to vary less than 0.2dB over -40 to +85C temperature range. The wide-dynamic-range mixer has a 9.5dB noise figure and IP3 of -2dBm at the input at 900MHz. The nominal current drawn from a single 3V supply is 7.4mA. The Mixer can be powered down to further reduce the supply current to 4.4mA.
PIN CONFIGURATION
DK Package
VCC 1 LNA GND 2 LNA IN 3 GND 4 GND 5 GND 6 MIXER PWRDN 7 20 VCC 19 GND 18 LNA OUT 17 GND 16 MIXER IN 15 GND 14 MIXER OUT 13 MIXER OUT 12 GND 11 V CC
FEATURES
* Low current consumption: 7.4mA nominal, 4.4mA with the mixer
powered-down
GND 8 LOIN1 9 LOIN2 10
* Outstanding LNA noise figure: 1.6dB at 900MHz * High system power gain: 18dB (LNA + Mixer) at 900MHz * Excellent gain stability versus temperature and supply voltage * External >-7dBm LO can be used to drive the mixer
APPLICATIONS
* 900MHz cellular front-end (NADC, GSM, AMPS, TACS) * 900MHz cordless front-end (CT1, CT2) * 900MHz receivers
TEMPERATURE RANGE -40 to +85C ORDER CODE SA601DK DWG # 1563
ORDERING INFORMATION
DESCRIPTION 20-Pin Plastic Shrink Small Outline Package (Surface-mount, SSOP)
BLOCK DIAGRAM
VCC GND LNA OUT GND MIXER IN GND MIXER OUT MIXER OUT GND VCC
20
19
18
17
16
15 IF RF
14
13
12
11
IF LO BUFFER
LNA
1
2
3
4
5
6
7
8
9
10
VCC
GND
LNA IN
GND
GND
GND
MIXER PWRDN
GND
LO IN1
LO IN2
December 15, 1994
1
853-1733 14477
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA and mixer - 1GHz
SA601
ABSOLUTE MAXIMUM RATINGS3
SYMBOL VCC VIN PD TJMAX PMAX TSTG Supply voltage1 PARAMETER RATING -0.3 to +6 -0.3 to (VCC + 0.3) air)2 980 150 +20 -65 to +150 mW C dBm C UNITS V V
Voltage applied to any other pin Power dissipation, TA = 25C (still 20-Pin Plastic SSOP
Maximum operating junction temperature Maximum power input/output Storage temperature range
NOTE: 1. Transients exceeding 8V on VCC pin may damage product. 2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance, JA: 20-Pin SSOP = 110C/W 3. Pins 9 and 10 are sensitive to electrostatic discharge (ESD).
RECOMMENDED OPERATING CONDITIONS
SYMBOL VCC TA TJ Supply voltage Operating ambient temperature range Operating junction temperature PARAMETER RATING 2.7 to 5.5 -40 to +85 -40 to +105 UNITS V C C
DC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25C; unless otherwise stated. LIMITS SYMBOL PARAMETER TEST CONDITIONS MIN TYP 7.4 ICC VLNA-IN VLNA-OUT VMX-IN Supply current LNA input bias voltage LNA output bias voltage Mixer RF input bias voltage Mixer power-down input low 4.4 0.78 2.1 0.94 mA V V V MAX UNITS
December 15, 1994
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Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA and mixer - 1GHz
SA601
AC ELECTRICAL CHARACTERISTICS
VCC = +3V, TA = 25C; LOIN = -7dBm @ 964MHz; unless otherwise stated. LIMITS SYMBOL S21 S21/T S21/f S12 S11 S22 P-1dB IP3 NF VGC PGC S11M NFM P-1dB IP3M IP2INT PRFM-IF PLO-IF PLO-RFM PLO-RF PLNA-RFM PRFM-LO LOIN Amplifier gain Gain temperature sensitivity Gain frequency variation Amplifier reverse isolation Amplifier input match1 PARAMETER TEST CONDITIONS 881MHz 881MHz 800MHz - 1.2GHz 881MHz 881MHz 881MHz 881MHz f2 - f1 = 25kHz, 881MHz 881MHz fS = 881MHz, fLO = 964MHz, fIF = 83MHz fS = 881MHz, fLO = 964MHz, fIF = 83MHz 881MHz 881MHz 881MHz f2 - f1 = 25kHz, 881MHz 881MHz 881MHz 881MHz 881MHz 881MHz 881MHz 881MHz 964MHz -3.5 8.0 -3.5 1.3 18.0 5.0 -3 10 TYP 11.5 0.003 0.01 -20 -10 -10 -16 -2 1.6 19.5 6.5 -10 9.5 -13 -2 12 -7 -25 -38 -40 -40 -23 -7 -0.5 11.0 -0.5 1.9 21.0 8.0 +3 13 UNITS dB dB/C dB/MHz dB dB dB dBm dBm dB dB dB dB dB dBm dBm dBm dB dB dB dB dB dB dBm
Amplifier output match1 Amplifier input 1dB gain compression Amplifier input third order intercept Amplifier noise figure Mixer voltage conversion gain: RP = RL = 1k Mixer power conversion gain: RP = RL = 1k Mixer input match1 Mixer SSB noise figure Mixer input 1dB gain compression Mixer input third order intercept Mixer input second order intercept Mixer RF feedthrough LO feedthrough to IF LO to mixer input feedthrough LO to LNA input feedthrough LNA output to mixer input Mixer input to LO feedthrough LO drive level
NOTE: 1. Simple L/C elements are needed to achieve specified return loss.
December 15, 1994
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Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA and mixer - 1GHz
SA601
C15 1F J1 LNA IN C1 100pF w = 10 mils L = 535 mils L1 56nH VCC C11 100pF w = 10 mils L = 535 mils
**
J5 LNA OUT
C2 2.7pF
**
U1
1 2 3 4 5 6 7 8 9 10 Vcc GND LNA IN GND GND GND MIXER PD GND LO IN LO IN
C13 100pF
C12 2.2pF w = 15 mils L = 95 mils C10 J4 MIXER IN
w = 15 mils L = 110 mils
J2 EXT LO (-7dBm, 964MHz)
C3 100pF
Vcc GND LNA OUT GND MIXER IN GND MIXER OUT MIXER OUT GND Vcc
20 19 18 17 16 15 14 13 12 11
C9 4.7pF w = 15 mils L = 190 mils C7
100pF
VCC L3 270nH 33pF C5 18pF C8 100nF
SA601
L2 470nH C4 100pF C14 100nF VCC C6 8.2pF R2
*
J3 MIXER OUT (50, 83MHz)
2.2k
** *
*SEE MIXER POWER GAIN NOTE BELOW ** SPIRAL INDUCTORS ON NATURAL FR-4, 62 MILS THICK ** * SEE MIXER FILTER INTERFACE NOTE BELOW
Figure 1. Application Circuit
CIRCUIT TECHNOLOGY LNA
Impedance Match: Intrinsic return loss at the input and output ports is 7dB and 9dB, respectively. With no external matching, the associated LNA gain is 10dB and the noise figure is 1.4dB. However, the return loss can be improved at 881MHz using suggested L/C elements (Figure 1) as the LNA is unconditionally stable. Noise Match: The LNA achieves 1.6dB noise figure at 881MHz when S11 = -10dB. Further improvements in S11 will slightly decrease the NF and increase S21. Temperature Compensation: The LNA has a built-in temperature compensation scheme to reduce the gain drift to 0.003dB/C from -40C to +85C. Supply Voltage Compensation: Unique circuitry provides gain stabilization over wide supply voltage range. The gain changes no more than 0.5dB when VCC increases from 3V to 5V. LO Drive Level: Resistor R1 can be replaced by an inductor of 4.7nH and C13 should be adjusted to achieve a good return loss at the LO port. Under this condition, the mixer will operate with less than -10dBm LO drive.
IP3 Performance: C9 between Pin 16 and ground can be removed to introduce 3dB mismatch loss, while improving the IP3 to +3dBm. The associated noise figure is 11dB.
Mixer
Input Match: The mixer is configured for maximum gain and best noise figure. The user needs to supply L/C elements to achieve this performance. Power Gain: The gain can be increased by approximately 1.5dB by placing R2 across C7, instead of C5. Power Down: The mixer can be disabled by connecting Pin 7 to ground. When the mixer is disabled, 3mA is saved. Power Combining: The mixer output circuit features passive power combining (patent pending) to optimize conversion gain and noise figure performance without using extra DC current or degrading the IP3. For IF frequencies significantly different than 83MHz, the component values must be altered accordingly. Filter Interface: For system integration where a high impedance filter of 1k is to be cascaded at the mixer IF output, capacitors C5 and C6 need to be changed to 27pF and 1000pF, respectively.
December 15, 1994
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Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA and mixer - 1GHz
SA601
Top View
R1
Silk Screen
Bottom View
Via Layer
Figure 2. SA601 Demoboard Layout (Not Actual Size) December 15, 1994 5
C11
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA and mixer - 1GHz
SA601
TYPICAL PERFORMANCE CHARACTERISTICS
CH1
S11
1
U
FS
4:
63.852
-160.23
4.9269 pF 200.000 000 MHz 1: 21.286 -12.381 900 MHz 27.471 -35.48 600 MHz 36.43 -70.445 400 MHz
2: 3:
START
200.000 000
MHz
STOP
1200.000 000
MHz
CH1
S22
1
U
FS
4:
99.543
-85.949
8.937 pF
200.000 000 MHz 1: 31.48 -14.217 900 MHz 44.82 -30.191 600 MHz 58.725 -50.83 400 MHz
2: 3:
START
200.000 000
MHz
STOP
1200.000 000
MHz
Figure 3. LNA Input and Output Match (at Device Pin)
December 15, 1994
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Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA and mixer - 1GHz
SA601
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
CH1
S21
7
U
FS
4:
6.2863 U
-150.58 200.000 000 MHz 1: 3.2504U 91.219 900 MHz 4.6877U 112.03 600 MHz 5.3895U 130.33 400 MHz
2: 3:
START
200.000 000
MHz
STOP
1200.000 000
MHz
CH1
S12
100 mU FS
4:
35.343 mU
-76.128 200.000 000 MHz 1: 89.561mU 61.127 900 MHz 74.51mU 64.608 600 MHz 58.082mU 67.162 400 MHz
2: 3:
START
200.000 000
MHz
STOP
1200.000 000
MHz
Figure 4. LNA Transmission and Isolation Characteristics (at Device Pin)
December 15, 1994
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Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA and mixer - 1GHz
SA601
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
CH1 S11 1 U FS 4: 10.867 1.6426 1.2543 nH 200.000 000 MHz
1:
6.7168 9.5952 900 MHz
START
200.000 000
MHz
STOP
1200.000 000
MHz
Figure 5. Mixer RF Input Match (at Device Pin)
Table 1. Typical LNA and Mixer S-Parameters
LNA f 200MHz 300MHz 400MHz 500MHz 600MHz 700MHz 800MHz 900MHz 1000MHz 1100MHz 1200MHz S11 63.852 - j 160.23 44.879 - j 101.69 36.43 - j 70.445 30.395 - j 48.393 27.471 - j 35.48 24.428 - j 25 22.434 - j 17.255 21.286 - j 12.381 20.261 - j 8.7109 19.718 - j 6.252 19.101 - j 4.9316 S22 99.543 - j 85.949 73.387 - j 67.707 58.725 - j 50.83 49.928 - j 38.813 44.82 - j 30.191 39.268 - j 24.502 34.664 - j 18.59 31.48 - j 14.217 27.887 - j 10.77 25.741 - j 8.2607 23.584 - j 6.2715 S21 6.2863U 150.58 5.8096U 140.47 5.3895U 130.33 5.0428U 120.5 4.6877U 112.03 4.2409U 104.44 3.7491U 97.765 3.2504U 91.219 2.8785U 84.957 2.5752U 82.893 2.1386U 80.257 S12 35.343mU 76.128 47.946mU 71.169 58.082mU 67.162 66.44mU 66.388 74.51mU 64.608 82.235mU 65.002 86.582mU 62.743 89.561mU 61.127 95.135mU 60.539 97.348mU 62.202 96.558mU 61.563 Mixer S11 10.867 + j 1.6426 10.4 + j 3.4609 10.067 + j 4.897 9.394 + j 6.0142 8.8945 + j 7.2227 8.1353 + j 8.1597 7.976 + j 9.1958 6.7168 + j 9.5952 6.2393 + j 10.271 6.0791 + j 10.571 5.8185 + j 10.288
December 15, 1994
8
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA and mixer - 1GHz
SA601
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
ICC vs. VCC and Temperature Mixer RF Input Match vs. Frequency (VCC = 3V)
CH1 S 11 log MAG 2 dB/ REF -5 dB
9 8.5 8 7.5
-40C Icc (mA) 7 6.5 6 5.5 5 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 START 800.000 000 MHz STOP 1 200. 000 000 MHz -40C 25C +85C 25C 85C
LNA Gain (S21) vs. Frequency (VCC = 3V)
CH1 S 21 log MAG 1 dB/ REF 10 dB CH1 S 12
LNA Isolation (S12) vs. Frequency (VCC = 3V)
log MAG 5 dB/ REF -10 dB
-40C 25C 85C
85C 25C -40C
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
CH1 S 11
LNA Input Match (S11) vs. Frequency (VCC = 3V)
log MAG 1 dB/ REF -10 dB CH1 S 22
LNA Output Match (S22) vs. Frequency (VCC = 3V)
log MAG 3 dB/ REF -10 dB
-40C 25C 85C -40C 25C 85C
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
START 800.000 000 MHz
STOP 1 200. 000 000 MHz
December 15, 1994
9
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA and mixer - 1GHz
SA601
Mixer Gain @ 83MHz vs. VCC and Temperature
7 3 2 -40C 25C 6.5 +85C 0 GAIN (dB) -1 -2 -3 -4 5.5 -5 -6 5 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 -7 1
Mixer IP3 @ 83MHz vs. VCC and Temperature
-40C 25C +85C +70C
GAIN (dB)
6
2.5
3
3.5
4 VCC (V)
4.5
5
5.5
12
Mixer NF @ 83MHz vs. VCC and Temperature
-40C -36
LO to Mixer in Feedthrough vs. VCC
11.5
25C +85C -37
11 NF (dB)
dB
10.5
-38
10 -39 9.5 -40 9 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 2.5 3 3.5 4 VCC (V) 4.5 5 5.5
LO to LNA Input Feedthrough vs. VCC
-36 -20
Mixer Input to LO Feedthrough vs. VCC
-21 -37
-22 dB -38 dB -23 -24 -25 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 2.5 3 3.5 4 VCC (V) 4.5 5 5.5
-39
-40
December 15, 1994
10
Philips Semiconductors RF Communications Products
Product specification
Low voltage LNA and mixer - 1GHz
SA601
-23
LO Feedthrough to IF vs. VCC
Mixer RF Feedthrough vs. VCC
-5
-24 -6
dB
-25
dB -7 -8 2.5 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 3 3.5 4 VCC (V) 4.5 5 5.5
-26
-27
LNA Output to Mixer Input vs. VCC
-38
LNA Gain vs. VCC and Temperature
12.50
-40C -39 25C 12.00 +85C
dB
GAIN (dB) 2.5 3 3.5 4 VCC (V) 4.5 5 5.5
-40
11.50
-41 11.00
-42 10.50 2.5 3 3.5 4 VCC (V) 4.00 4.5 5 5.5
LNA IP3 vs. VCC and Temperature
2.50
LNA NF vs. VCC and Temperature
2.00 2.00 0.00
dB
-2.00 dB -4.00 -40C -6.00 25C +85C -8.00
1.50
1.00 -40C 25C 0.50 +85C
-10.00 2.5 3 3.5 4 VCC (V) 4.5 5 5.5 0.00 2.5 3 3.5 4 VCC (V) 4.5 5 5.5
December 15, 1994
11

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